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參數(shù)資料
| 型號： | HGT1S7N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-262AA |
| 封裝： | TO-262, 3PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 197K |
| 代理商： | HGT1S7N60C3D |
3-26
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
f
M
,
2
10
20
30
10
100
200
1
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 50
, L = 1mH
V
GE
= 15V
V
GE
= 10V
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 2.1
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
V
CE(PK)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
10
20
30
40
T
J
= 150
o
C, V
GE
= 15V, R
G
= 50
, L = 1mH
50
C
OES
C
RES
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
1000
1200
C
C
IES
FREQUENCY = 1MHz
800
600
400
200
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
I
G
REF = 1.044mA, R
L
= 50
, T
C
= 25
o
C
0
300
200
400
500
600
15
12.5
10
7.5
5
0
5
10
15
20
25
30
0
100
2.5
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
P
D
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT1Y40N60C3D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 |
| HGT4E20N60A4DS | 功能描述:IGBT 晶體管 TO-268 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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