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參數(shù)資料
| 型號： | HGT1S7N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-262AA |
| 封裝： | TO-262, 3PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 197K |
| 代理商： | HGT1S7N60C3D |
3-25
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
Typical Performance Curves
(Continued)
t
D
,
10
20
30
2
5
I
CE
, COLLECTOR-EMITTER CURRENT (A)
11
14
50
17
20
40
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
8
5
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
D
,
400
350
250
200
8
11
14
17
20
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V or 15V
300
5
500
450
2
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
R
,
5
10
100
V
GE
= 15V
V
GE
= 10V
200
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
F
,
100
200
300
150
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
250
V
GE
= 10V or 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
E
O
,
μ
J
100
500
1000
2000
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
E
O
,
μ
J
500
1000
3000
100
V
GE
= 10V or 15V
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
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| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT1Y40N60C3D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 |
| HGT4E20N60A4DS | 功能描述:IGBT 晶體管 TO-268 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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