- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384405 > HGT1S7N60C3D (FAIRCHILD SEMICONDUCTOR CORP) 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes PDF資料下載
參數(shù)資料
| 型號： | HGT1S7N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-262AA |
| 封裝： | TO-262, 3PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 197K |
| 代理商： | HGT1S7N60C3D |
3-24
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
4
6
8
10
12
0
5
10
20
25
30
35
14
15
40
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
0
2
4
6
8
10
5
10
15
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
20
25
30
35
40PULSE DURATION = 250
μ
s,
DUTY CYCLE <0.5%,
T
C
= 25
C
10.0V
I
C
,
0
15
0
1
2
3
4
5
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
5
10
25
35
40
30
DUTY CYCLE <0.5%, V
GE
= 10V
PULSE DURATION = 250
μ
s
I
C
,
0
15
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
5
10
20
25
30
35
40
25
50
75
100
125
150
0
3
6
9
12
15
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
60
80
120
t
S
,
μ
S
11
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
12
14
15
13
140
100
40
I
SC
t
SC
10
12
V
CE
= 360V, R
GE
= 50
, T
J
= 125
o
C
4
6
8
2
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP7N60C3D | 72 MACROCELL 3.3 VOLT ISP CPLD |
| HGTP7N60C3D | 3.3V 72-mc CPLD |
| HGT1S7N60C3DS | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT4E20N60A4DS | CONNECTOR ACCESSORY |
| HGT4E30N60B3DS | CONNECTOR ACCESSORY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT1Y40N60C3D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 |
| HGT4E20N60A4DS | 功能描述:IGBT 晶體管 TO-268 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。