參數(shù)資料
型號(hào)： HGT1S14N37G3VLS
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N溝道,邏輯電平,電壓箝位IGBTs)
中文描述： 25 A, N-CHANNEL IGBT, TO-263AB
文件頁數(shù)： 5/8頁
文件大?。?/td> 128K
代理商： HGT1S14N37G3VLS
5
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
8
4
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
16
24
12
50
25
75
100
125
150
20
28
0
175
V
GE
= 5V
V
G
,
0.8
1.2
1.6
1.0
1.4
1.8
2.0
-50
25
100
175
T
J
, JUNCTION TEMPERATURE (
o
C)
I
CE
= 1mA
V
CE
= V
GE
L
μ
A
0.1
10
100
25
50
75
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
125
1000
10000
1
175
V
ECS
= 24V
V
CES
= 300V
V
CES
= 250V
μ
s
T
J
, JUNCTION TEMPERATURE (
o
C)
2
14
4
10
6
8
12
16
25
50
75
100
150
125
175
RESISTIVE t
OFF
INDUCTIVE t
OFF
RESISTIVE t
ON
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1k
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
5
10
15
20
25
0
800
1600
2000
1200
2400
400
FREQUENCY = 1MHz
C
RES
C
OES
C
IES
0
16
40
Q
G
, GATE CHARGE (nC)
4
0
56
V
G
,
8
8
24
32
48
2
6
I
G(REF)
= 1mA, R
L
= 1.865
, T
J
= 25
o
C
V
CE
= 12V
V
CE
= 6V
HGT1S14N37G3VLS, HGTP14N37G3VL
相關(guān)PDF資料
PDF描述
HGTP14N37G3VL 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N溝道,邏輯電平,電壓箝位IGBTs)
HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S20N36G3VLS 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S14N37G3VLS9A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
HGT1S14N40F3VLS 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S14N40G3VLS 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N41G3VLS 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N41G3VLS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB
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