參數(shù)資料
型號(hào)： HGT1S20N36G3VL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
中文描述： 37.7 A, 355 V, N-CHANNEL IGBT, TO-262AA
封裝： TO-262AA, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 256K
代理商： HGT1S20N36G3VL
2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
HGTP20N36G3VL,HGT1S20N36G3VLS,
HGT1S20N36G3VL
20A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
JEDEC TO-263AB
JEDEC TO-262AA
Symbol
ECG
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
E
G
COLLECTOR
(FLANGE)
ECG
GATE
R
2
R
1
COLLECTOR
EMITTER
Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
T
J
= 175
o
C
Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the collector and the gate which provides Self Clamped Inductive
Switching (SCIS) capability in ignition circuits. Internal diodes pro-
vide ESD protection for the logic level gate. Both a series resistor
and a shunt resistor are provided in the gate circuit
.
PACKAGING
The development type number for this device is TA49296.
PART NUMBER
PACKAGE
BRAND
HGTP20N36G3VL
TO-220AB
20N36GVL
HGT1S20N36G3VL
TO-262AA
20N36GVL
HGT1S20N36G3VLS
TO-263AB
20N36GVL
March 2004
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP20N36G3VL
HGT1S20N36G3VL
HGT1S20N36G3VLS
395
28
37.7
26
±
10
21
16
500
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
Collector-Emitter Bkdn Voltage At 10mA, R
GE
= 1k
. . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous At V
GE
= 5.0V, T
C
= +25
o
C, Figure 7 . . . . . . . . . . . . . I
C25
At V
GE
= 5.0V, T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . .I
C100
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Inductive Switching Current At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . .I
SCIS
At L = 2.3mH, T
C
= +150
o
C . . . . . . . . . . . . . . . . . . . . . .I
SCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . E
AS
Power Dissipation Total At T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD
NOTE: May be exceeded if I
GEM
is limited to 10mA.
相關(guān)PDF資料
PDF描述
HGT1S20N36G3VLS 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S20N36G3VLS 功能描述:IGBT 晶體管 20A 360V Clamp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S20N60A4S9A 功能描述:IGBT 晶體管 600V SMPS SERIES NCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S20N60B3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S20N60B3S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-263AB
HGT1S20N60C3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-262AA
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