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參數(shù)資料
| 型號： | HGT1S14N37G3VLS |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N溝道,邏輯電平,電壓箝位IGBTs) |
| 中文描述： | 25 A, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | HGT1S14N37G3VLS |
3
Gate to Emitter Breakdown Voltage
BV
GES
t
d(ON)I
I
GES
=
±
2mA
I
C
= 6.5A, R
G
= 1k
, V
GE
= 5V,
R
L
= 2.1
, V
DD
= 14V, T
J
= 150
o
C
(Figure 14)
±
12
±
14
-
V
Current Turn-On Delay Time -
Resistive Load
-
1
4
μ
s
Current Turn-On Rise Time -
Resistive Load
t
rI
I
C
= 6.5A, R
G
= 1k
V
GE
= 5V, R
L
= 2.1
V
DD
= 14V, T
J
= 150
o
C (Figure 14)
t
d(OFF)I
+ t
fI
I
C
= 6.5A, R
G
= 1k
V
GE
= 5V, L = 300
μ
H
V
DD
= 300V, T
J
= 150
o
C (Figure 14)
I
SCIS
L = 3mH, V
G
= 5V,
R
G
= 1k
(Figures 1 and 2)
-
3
7
μ
s
Current Turn-Off Time -
Inductive Load
-
10
30
μ
s
Inductive Use Test
T
C
= 150
o
C
T
C
= 25
o
C
11.5
-
-
A
15
-
-
A
Thermal Resistance
R
θ
JC
(Figure 18)
-
-
1.1
o
C/W
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs INDUCTANCE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERARURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
12
4
44
20
I
S
,
40
160
200
120
80
t
AV
, TIME IN AVALANCHE (ms)
28
36
52
60
R
G
= 1k
, V
GE
= 5V
I
SCIS
CAN BE LIMITED BY gfs at V
GE
= 5V
T
J
= 25
o
C
T
J
= 150
o
C
L, INDUCTANCE (mH)
24
0
I
S
,
8
6
8
4
2
10
0
32
40
16
48
56
T
J
= 25
o
C
T
J
= 150
o
C
R
G
= 1k
, V
GE
= 5V
I
SCIS
CAN BE LIMITED BY gfs at V
GE
= 5V
T
J
, JUNCTION TEMPERATURE (
o
C)
1.08
1.00
1.20
1.28
V
C
,
-50
25
100
175
1.04
1.12
1.16
1.24
I
CE
= 6A
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
T
J
, JUNCTION TEMPERATURE (
o
C)
-50
25
100
175
1.38
1.30
1.50
1.34
1.42
1.46
V
C
,
I
CE
= 10A
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
HGT1S14N37G3VLS, HGTP14N37G3VL
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S14N37G3VLS9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N40F3VLS | 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S14N40G3VLS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S14N41G3VLS | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S14N41G3VLS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB |
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