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參數(shù)資料
| 型號： | HGT1S12N60B3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 27 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 112K |
| 代理商： | HGT1S12N60B3S |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
20
15
10
20
30
5
25
30
35
40
45
50
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
25
55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
25
0
50
75
125
100
30
5
150
25
20
15
T
J
= 25
o
C and T
J
= 150
o
C, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
10
15
30
5
125
250
300
25
20
100
200
150
175
225
275
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
15
30
5
60
80
100
120
140
25
20
70
90
110
130
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
C
,
0
20
40
60
80
100
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
PULSE DURATION = 250
μ
s
11
12
13
14
15
120
T
C
= -55
o
C
140
160
180
4
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
Q
g
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
10
5
15
30
V
G
,
I
g (REF)
= 1mA, R
L
= 25
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
35
40
45
50
25
HGTP12N60B3, HGT1S12N60B3S
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PDF描述 |
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| HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60C3S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs |
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S12N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3DRS | 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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