參數(shù)資料
型號: HGT1S12N60B3S
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
中文描述: 27 A, 600 V, N-CHANNEL IGBT
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 3/7頁
文件大?。?/td> 112K
代理商: HGT1S12N60B3S
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25
L = 1mH
Test Circuit (Figure 17)
-
22
-
ns
Current Rise Time
t
rI
-
23
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
280
295
ns
Current Fall Time
t
fI
-
112
175
ns
Turn-On Energy (Note 4)
E
ON1
-
165
-
μ
J
Turn-On Energy (Note 4)
E
ON2
-
500
525
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
660
800
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
1.2
o
C/W
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 17.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
5
0
20
10
15
25
30
V
GE
= 15V
25
75
100
125
150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
50
700
30
0
I
C
,
10
20
300
400
200
100
500
600
40
0
60
70
80
90
100
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 100
μ
H
HGTP12N60B3, HGT1S12N60B3S
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