參數(shù)資料
型號: HGT1S12N60B3S
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
中文描述: 27 A, 600 V, N-CHANNEL IGBT
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 2/7頁
文件大?。?/td> 112K
代理商: HGT1S12N60B3S
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP12N60B3, HGT1S12N60B3S
600
27
12
110
±
20
±
30
96A at 600V
104
0.83
100
-55 to 150
UNITS
V
A
A
A
V
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
W
W/
o
C
mJ
o
C
300
260
5
10
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
20
28
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
μ
A
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
-
1.6
2.1
V
-
1.7
2.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A, V
CE
= V
GE
4.5
4.9
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 25
,
V
GE
= 15V
L = 100
μ
H, V
CE
= 600V
-
-
±
250
nA
Switching SOA
SSOA
96
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.3
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
51
60
nC
V
GE
= 20V
-
68
78
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25
L = 1mH
Test Circuit (Figure 17)
-
26
-
ns
Current Rise Time
t
rI
-
23
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
150
-
ns
Current Fall Time
t
fI
-
62
-
ns
Turn-On Energy (Note 4)
E
ON1
-
150
-
μ
J
Turn-On Energy (Note 4)
E
ON2
-
304
350
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
250
350
μ
J
HGTP12N60B3, HGT1S12N60B3S
相關PDF資料
PDF描述
HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGT1S12N60C3S9A TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGT1S1N120BNDS 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管(帶反并行超快速二極管))
相關代理商/技術參數(shù)
參數(shù)描述
HGT1S12N60B3S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60C3D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60C3DRS 制造商:Harris Corporation 功能描述:
HGT1S12N60C3DS 制造商:Rochester Electronics LLC 功能描述:- Bulk