參數(shù)資料
型號: HGT1S12N60B3S
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
中文描述: 27 A, 600 V, N-CHANNEL IGBT
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 4/7頁
文件大?。?/td> 112K
代理商: HGT1S12N60B3S
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
T
C
75
o
C
75
o
C 10V
V
GE
15V
110
o
C 10V
15V
110
o
C
f
M
,
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
1
100
30
T
J
= 150
o
C, R
G
= 25
, L = 1mH, V
CE
= 480V
10
20
300
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
2
4
6
8
12
16
10
30
40
50
60
70
80
100
t
SC
I
SC
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
14
90
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
30
6
8
10
60
50
40
T
C
= -55
o
C
T
C
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 25
o
C
70
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
100
120
140
160
180
0
2
4
0
40
80
6
8
10
60
20
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
E
O
,
2.5
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
20
10
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
30
25
15
5
3.0
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
0.5
25
15
10
20
30
5
1.0
2.5
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C; V
GE
= 10V OR 15V
T
J
= 25
o
C; V
GE
= 10V OR 15V
2.0
1.5
HGTP12N60B3, HGT1S12N60B3S
相關(guān)PDF資料
PDF描述
HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGT1S12N60C3S9A TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGT1S1N120BNDS 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管(帶反并行超快速二極管))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S12N60B3S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60C3D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60C3DRS 制造商:Harris Corporation 功能描述:
HGT1S12N60C3DS 制造商:Rochester Electronics LLC 功能描述:- Bulk