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參數(shù)資料
| 型號(hào)： | HE9015 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HE9015 |
HI-SINCERITY
MICROELECTRONICS CORP.
HE9015
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6101
Issued Date : 1992.08.25
Revised Date : 2002.02.18
Page No. : 1/4
HE9015
HSMC Product Specification
Description
The HE9015 is designed for use in pre-amplifier of low level and low
noise.
Features
High Total Power Dissipation (PD: 450mW)
Complementary to HE9014
High hFE and Good Linearity
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 450 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -45 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
Cob
fT
Min.
-50
-45
-5
-
-
-
-
-0.6
100
-
100
Typ.
-
-
-
-
-
-0.20
-0.82
-0.65
200
4.5
190
Max.
-
-
-
-50
-50
-0.7
-1
-0.75
600
7
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-1mA
VCB=-10V, f=1MHz, IE=0
VCE=-5V, IC=-10mA
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
MHz
Classification on hFE1
Rank
Range
B
C
100-300
200-600
TO-92
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