參數(shù)資料
型號(hào)： HE8050
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 36K
代理商： HE8050
HI-SINCERITY
MICROELECTRONICS CORP.
HE8050
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6112
Issued Date : 1992.09.30
Revised Date : 2001.08.13
Page No. : 1/3
HE8050
HSMC Product Specification
Description
The HE8050 is designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
Features
High total power dissipation (PT: 2W, TC=25
°
C)
High collector current (IC: 1.5A)
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 40 V
VCEO Collector to Emitter Voltage..................................................................................... 25 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current........................................................................................................... 1.5 A
IB Base Current............................................................................................................. 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min.
40
25
6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
Max.
-
-
-
100
100
0.5
1.2
1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=100uA
IC=2mA
IE=100uA
VCB=35V
VEB=6V
IC=0.8A, IB=80mA
IC=0.8A, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
--
-
-
-
-
-
-
-
MHz
Classification on hFE2
Rank
Range
B
C
D
E
85-160
120-200
160-320
250-500
相關(guān)PDF資料
PDF描述
HE8051S NPN EPITAXIAL PLANAR TRANSISTOR
HE8051 NPN EPITAXIAL PLANAR TRANSISTOR
HE8550S PNP EPITAXIAL PLANAR TRANSISTOR
HE8550 PNP EPITAXIAL PLANAR TRANSISTOR
HE8551S PNP EPITAXIAL PLANAR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HE8050G-X-AB3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
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HE8050G-X-T92-K 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
HE8050G-X-T9N-B 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
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