參數(shù)資料
型號: HBFP-0450-TR3
英文描述: TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 100MA I(C) | SOT-343
中文描述: 晶體管|晶體管|叩| 4.5VV(巴西)總裁| 100mA的一(c)|的SOT - 343
文件頁數(shù): 6/10頁
文件大小: 85K
代理商: HBFP-0450-TR3
6
HBFP-0405 Die Model and PSPICE Parameters
CMP9
R
CMP7
R
CMP8
R
CMP69
R
R-1 OH
R=1.565 OH
R=3.74196 OH
R=6.5915 OH
TEMP=
MODEL=DBE
REGION=
AREA=
AREA=
REGION=
MODEL=BJTMODEL
AREA=
REGION=
MODEL=DCS
TEMP=
AREA=
REGION=
MODEL=DBC
TEMP=
C=6.227E-3 pF
C=17.213E-3 pF
XX
E
CMP1
NPNBJTSUBST
CMP5
C
C
CMP6
C
CMP2
DIODE
CMP16
DIODE
CMP3
DIODE
B
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=
CJO=2.593E-14
TT=
EG=
VJ=0.8971
M=2.292E-1
N=1.0029
FC=0.8
CMP11
DIODEMODELFORM
# DIODE MODEL #
MODEL = DBE
IS=I.40507E-17
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=
CJO=2.393E-14
TT=
EG=
VJ=0.729
M=0.44
N=1
FC=0.8
CMP10
DIODEMODELFORM
# DIODE MODEL #
MODEL = DBC
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=2.17347E2
CJO=8.974E-14
TT=
EG=
VJ=0.6
M=0.42
N=
FC=0.8
CMP12
DIODEMODELFORM
# DIODE MODEL #
MODEL = DCS
NPN=yes
PNP=
Forward
BF=1E6
IKE=1.4737E-1
ISE=7.094E-20
NE=1.006
VAF=4.4E1
NF=1
TF=5.3706E-12
XTF=20
VTF=0.8
ITF=2.21805486E-1
PTF=22
XTB=0.7
APPROXOB=yes
Reverse
BR=1
IKR=1.1E-2
ISC=
NC=2
VAR=3.37
NR=1.005
TR=4E-9
Noise
KI=
AF=
KB=
AB=
FB=
Diode and junction
EG=1.17
IS=4.4746E VJC=.6775
IMAX=
XTI=3
TNOM=21
Substrate
NS=
CJS=
VJS=
MJS=
Parasitics
RB-9.30144818
IRB=3.029562E-6
RBM=.1
RE=
RC=
Substrate
NS=
CJC=2.7056E-14
MJC=0.3319
FC=0.8
CJE=7.474248E
VJE=0.9907
MJE=0.5063
CMP68
BITMODELFORM
# BJT MODEL #
MODEL = BJTMODEL
XC
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more
precise and accurate design, please refer to the measured data in this data sheet.
Note:
The value of beta was high (BF =1E6) to compensate for the fact that diode DBE reduces the current going into the
base (current flows through DBE). The diodes are necessary to model the non-linear effects.
相關PDF資料
PDF描述
HBFP-0405-TR1 High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0405-TR2 High Performance Isolated Collector Silicon Bipolar Transistor
HBFP0405 High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0405 Silicon Bipolar Transistors(硅雙極型晶體管)
HBFP-0420 Silicon Bipolar Transistors(硅雙極型晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
HBFR113-S 制造商:SEOUL 制造商全稱:Seoul Semiconductor 功能描述:Surface-mounted chip LED device
HBFR-1602 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Telecomm/Datacomm
HBFR-1604 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Telecomm/Datacomm
HBFR-2602 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Telecomm/Datacomm
HBFR411-SK 功能描述:標準LED-SMD Red/Blue RoHS:否 制造商:Vishay Semiconductors 封裝 / 箱體:0402 LED 大小:1 mm x 0.5 mm x 0.35 mm 照明顏色:Red 波長/色溫:631 nm 透鏡顏色/類型:Water Clear 正向電流:30 mA 正向電壓:2 V 光強度:54 mcd 顯示角:130 deg 系列:VLMx1500 封裝:Reel