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參數(shù)資料
| 型號： | HBFP-0450-TR3 |
| 英文描述： | TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 100MA I(C) | SOT-343 |
| 中文描述： | 晶體管|晶體管|叩| 4.5VV（巴西）總裁| 100mA的一（c）|的SOT - 343 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 85K |
| 代理商： | HBFP-0450-TR3 |
2
HBFP-0405 Absolute Maximum Ratings
Absolute
Maximum
[1]
Symbol
Parameter
Units
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2]
Junction Temperature
Storage Temperature
V
V
V
1.5
15.0
4.5
12
54
150
mA
mW
°
C
°
C
-65 to 150
Thermal Resistance:
θ
jc
= 550
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. P
T
limited by maximum ratings.
Electrical Specifications, T
C
= 25
°
C
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
DC Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Base Cutoff Current
h
FE
DC Current Gain
RF Characteristics
F
MIN
Minimum Noise Figure
G
a
Associated Gain
|S
21
|
2
Insertion Power Gain
P
-1dB
Power Output @ 1 dB
Compression Point
I
C
= 1 mA, open base
V
CB
= 5 V, I
E
= 0
V
EB
= 1.5 V, I
C
= 0
V
CE
= 2 V, I
C
= 2 mA
V
4.5
nA
μ
A
—
150
15
150
50
80
I
C
= 2 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 2 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz dBm
dB
dB
dB
1.2
18
17
5
1.5
16.5
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