參數(shù)資料
型號: HBFP-0450-TR3
英文描述: TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 100MA I(C) | SOT-343
中文描述: 晶體管|晶體管|叩| 4.5VV(巴西)總裁| 100mA的一(c)|的SOT - 343
文件頁數(shù): 1/10頁
文件大小: 85K
代理商: HBFP-0450-TR3
High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
Features
Ideal for High Gain, Low
Current Applications
Typical Performance at
1.8 GHz
Associated Gain of 18 dB
and Noise Figure of 1.2 dB
at 2V and 2 mA
P
1dB
of 5 dBm at 2 V and
5 mA
Miniature 4-lead SC-70
( SOT-343) Plastic Package
Transition Frequency
f
T
= 25 GHz
Applications
LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
Oscillator for
TV Delivery
and TVRO Systems up to
12 GHz
HBFP-0405
Description
Hewlett Packard’s HBFP-0405 is a
high performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
HBFP-0405 provides an associated
gain of 18 dB, noise figure of
1.2 dB, and P
1dB
of 5 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0405 is ideal for
cellular/
PCS
as well as for
C-Band and
K u-Band
applications.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
Surface Mount Plastic
Package/SOT-343 (SC-70)
Outline 4T
Pin Configuration
Collector
Emitter
Base
0
Emitter
Note:
Package marking provides orientation
and identification.
相關PDF資料
PDF描述
HBFP-0405-TR1 High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0405-TR2 High Performance Isolated Collector Silicon Bipolar Transistor
HBFP0405 High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0405 Silicon Bipolar Transistors(硅雙極型晶體管)
HBFP-0420 Silicon Bipolar Transistors(硅雙極型晶體管)
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