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參數(shù)資料
| 型號(hào)： | HBFP-0420 |
| 英文描述： | Silicon Bipolar Transistors(硅雙極型晶體管) |
| 中文描述： | 硅雙極晶體管（硅雙極型晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | HBFP-0420 |
Silicon Bipolar Transistors
Reliability Data
Description
The following cumulative test
results have been obtained by
Hewlett-Packard from process and
monitor, and engineering
HBFP-0405
HBFP-0420
HBFP-0450
evaluation tests. For the purpose
of this reliability data sheet, a
failure is any part which does not
meet the relevant Hewlett-Packard
specification following the
reliability tests.
Units
Tested
Total
Total
Failed
Test Name
Test Conditions
Device Hrs.
High Temperature
Operating Life (O.L.)
T
J
= 150C
V
CE
= 2 V, I
C
= 20 mA
155
301,000
0
High Temperature
Reverse Bias (HTRB)
T
J
= 150C, V
cbo
= 12 V
156
156,000
0
1.0 Life Test
A. Demonstrated Performance
B. Failure Rate Prediction
Point MTTF is simply the total
device hours divided by the
number of failures. Since no
failure was observed, an
assumption was made that one
unit failed. The assumed
distribution is exponential and is
commonly used in describing
useful life failures. FIT is defined
as failures in time, or specifically
failures per billion hours. The
relationship between MTTF and
FIT is as follows: FIT = 10
9
/MTTF.
The failure rate will depend on the
junction temperature of the
device. The estimated life at
different temperatures is
calculated using activation energy
of 1.0 eV.
Point
90% Confidence Level
J unction
Temp.
T
J
(
°
C)
150
160
130
120
110
100
90
80
70
60
50
MTTF
(hours)
3.0 x 10
5
5.6 x 10
6
1.2 x 10
6
2.5 x 10
6
5.3 x 10
6
1.2 x 10
7
2.8 x 10
7
7.0 x 10
7
1.8 x 10
8
5.0 x 10
8
1.5 x 10
9
MTTF
(hours)
1.3 x 10
5
2.4 x 10
5
5.2 x 10
5
1.1 x 10
6
2.3 x 10
6
5.2 x 10
6
1.2 x 10
7
3.0 x 10
7
7.8 x 10
7
2.2 x 10
8
6.5 x 10
8
FIT
3322
1709
850
408
189
84
36
14
5
2
1
FIT
7649
3935
1957
939
435
193
83
32
12
5
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HBFP-0450 | Silicon Bipolar Transistors(硅雙極型晶體管) |
| HBFP0420 | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-BLK | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR1 | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR2 | High Performance Isolated Collector Silicon Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HBFP-0420-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 36MA I(C) | SOT-343R |
| HBFP-0450 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3V High Performance Transistor |
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