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參數(shù)資料
| 型號： | HBD237 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | HBD237 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBD237
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6622-A
Issued Date : 1994.09.08
Revised Date : 2000.10.01
Page No. : 1/2
HSMC Product Specification
Description
The HBD237 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 25 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................... 80 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
BVCER Emitter to Base Voltage....................................................................................... 100 V
IC Collector Current.............................................................................................................. 2 A
IC Collector Current (Pulse).................................................................................................. 6 A
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
100
80
5
-
-
-
-
40
25
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
1
0.6
1.3
-
-
-
Unit
V
V
V
uA
mA
V
V
Test Conditions
IC=1mA
IC=100mA
IE=100uA
VCB=100V
VBE=5V
IC=1A, IB=0.1A
IC=1A, VCE=2V
IC=150mA, VCE=2V
IC=1A, VCE=2V
VCE=10V, IC=250mA, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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