參數(shù)資料
型號(hào)： HBD139
廠商： HSMC CORP.
英文描述： NPN POWER TRANSISTORS
中文描述： NPN電源晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 36K
代理商： HBD139
HI-SINCERITY
MICROELECTRONICS CORP.
HBD139
NPN POWER TRANSISTORS
Description
PNP power transistor in a TO-126 plastic package. NPN complements:
HBD140
Features
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 1/3
HBD139
HSMC Product Specification
High Current (max. 1.5A)
Low Voltage (max. 80V)
Applications
Driver stages in hi-fi amplifiers and television circuits.
Limiting Values
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Parametor
Conditions
Open Emitter
Open Base
Open Collector
Min.
-
-
-
-
-
-
-
-
-65
-
-65
Max.
100
80
5
1.5
2
1
1.2
15
150
150
150
Unit
V
V
V
A
A
A
W
W
°
C
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Ta=25
°
C
Tc=25
°
C
-
-
-
PD
Total Dissipation at
Tstg
Tj
Tamb
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Electrical Characteristics
(Tj=25
°
C, unless otherwise specified)
Symbol
ICBO
IEBO
Parameter
Conditions
Min.
-
-
Typ.
-
-
Max.
100
100
Unit
nA
nA
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
IE=0, VCB=30V
IC=0, VEB=5V
*VCE(sat)
IC=500mA, IB=50mA
-
-
0.5
V
*VBE
IC=500mA, VCE=2V
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA,
IC=50mA, VCE=5V, f=100MHz
-
-
-
-
-
1
-
V
-
-
-
40
63
25
-
250
-
-
hFE
DC Current Gain
fT
Transition Frequency
DC current gain ratio of
the complementary pairs
240
MHz
*hFE1/hFE2
|IC|=150mA, |VCE|=2V
-
0.9
1.6
-
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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