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參數(shù)資料
| 型號： | HBD136 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP POWER TRANSISTORS |
| 中文描述： | PNP功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 36K |
| 代理商： | HBD136 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBD136
PNP POWER TRANSISTORS
Description
PNP power transistor in a TO-126 plastic package. NPN complements:
HBD135
Features
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 1/3
HBD136
HSMC Product Specification
High Current (max. 1.5A)
Low Voltage (max. 80V)
Applications
General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits.
Limiting Values
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Parametor
Conditions
Open Emitter
Open Base
Open Collector
Min.
-
-
-
-
-
-
-
-
-65
-
-65
Max.
-45
-45
-5
-1.5
-2
-1
1.2
15
150
150
150
Unit
V
V
V
A
A
A
W
W
°
C
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Ta=25
°
C
Tc=25
°
C
-
-
-
PD
Total Dissipation at
Tstg
Tj
Tamb
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Electrical Characteristics
(Tj=25
°
C, unless otherwise specified)
Symbol
ICBO
IEBO
Parameter
Conditions
Min.
-
-
Typ.
-
-
Max.
-100
-100
Unit
nA
nA
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
IE=0, VCB=-30V
IC=0, VEB=-5V
*VCE(sat)
IC=-500mA, IB=-50mA
-
-
-0.5
V
*VBE
IC=-500mA, VCE=-2V
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA,
IC=-50mA, VCE=-5V, f=100MHz
-
-
-
-
-
-1
-
250
-
-
V
-
-
-
40
63
25
-
hFE
DC Current Gain
fT
Transition Frequency
DC current gain ratio of
the complementary pairs
230
MHz
*hFE1/hFE2
|IC|=150mA, |VCE|=2V
-
1
1.6
-
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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