- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381860 > HBAT54 (HSMC CORP.) Silicon Schottky Barrier Double Diodes PDF資料下載
參數(shù)資料
| 型號： | HBAT54 |
| 廠商： | HSMC CORP. |
| 英文描述： | Silicon Schottky Barrier Double Diodes |
| 中文描述： | 雙硅肖特基二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 23K |
| 代理商： | HBAT54 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBAT54\A\C\S
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 1/3
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
Description
Silicon Schottky Barrier Double Diodes
Features
These diodes feature very low turn-on voltage and fast switching.
There is a PN junction guard ring against excessive voltage such as
electronics attic discharges protects these devices.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature.............................................................................................. -65~+125
°
C
Junction Temperature.................................................................................................... +125
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 230 mW
Maximum Voltages and Currents (Ta=25
°
C)
Repetitive Peak Reverse Voltage........................................................................................ 30 V
Forward Continuous Current.......................................................................................... 200 mA
Repetitive Peak Forward Current .................................................................................. 300 mA
Surge Forward Current (tp<1s)....................................................................................... 600 mA
Characteristics
(Ta=25
°
C)
Characteristic
Symbol
V(BR)R
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
CT
Condition
Min.
30
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
Unit
V
mV
mV
mV
mV
mV
uA
pF
Reverse breakdown Voltage
IR=10uA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA RL=100
measured at IR=1mA
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Trr
-
5
nS
SOT-23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HBAT54A | Silicon Schottky Barrier Double Diodes |
| HBAT54C | Silicon Schottky Barrier Double Diodes |
| HBAT54S | Silicon Schottky Barrier Double Diodes |
| HBAV70 | SWITCHING DIODE |
| HBAV99 | HIGH-SPEED SWITCHING DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HBAT54_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon Schottky Barrier Double Diodes |
| HBAT-5400 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Schottky Diode for Transient Suppression |
| HBAT-5400-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Schottky Diode for Transient Suppression |
| HBAT-5400-BLKG | 功能描述:肖特基二極管與整流器 220mA 250mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| HBAT-5400-TR1 | 功能描述:DIODE SCHOTTKY 30V 220MA SOT-23 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 二極管 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 二極管類型:PIN - 單 電壓 - 峰值反向(最大):50V 電流 - 最大:50mA 電容@ Vr, F:0.4pF @ 50V，1MHz 電阻@ Vr, F:4.5 歐姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:3-MCP 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。