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| 型號： | HBAV99 |
| 廠商： | HSMC CORP. |
| 英文描述： | HIGH-SPEED SWITCHING DIODE |
| 中文描述： | 高速開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 24K |
| 代理商： | HBAV99 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBAV99
HIGH-SPEED SWITCHING DIODE
Spec. No. : HE6834
Issued Date : 1998.02.01
Revised Date : 2002.10.24
Page No. : 1/3
HBAV99
HSMC Product Specification
Description
The HBAV99 consists of two diodes in a plastic surface mount
package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and
thin-film circuits.
Features
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -65 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 250 mW
Maximum Voltages and Currents (Ta=25
°
C)
Reverse Voltage.................................................................................................................. 70 V
Repetitive Reverse Voltage ................................................................................................. 70 V
Forward Current ............................................................................................................. 150 mA
Repetitive Forward Current ............................................................................................ 500 mA
Forward Surge Current (1ms)....................................................................................... 1000 mA
Characteristics
(Ta=25
°
C)
Characteristic
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Condition
Min
70
-
-
-
-
-
-
Max
-
715
855
1000
1250
2.5
1.5
Unit
V
mV
mV
mV
mV
uA
pF
Reverse Breakdown Voltage
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=70
VR=0, f=1MHz
IF=IR=10mA, RL=100
measured at IR=1mA
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Trr
-
6
nS
SOT-23
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