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參數(shù)資料
| 型號(hào)： | HBAT54A |
| 廠商： | HSMC CORP. |
| 英文描述： | Silicon Schottky Barrier Double Diodes |
| 中文描述： | 雙硅肖特基二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 23K |
| 代理商： | HBAT54A |
HI-SINCERITY
MICROELECTRONICS CORP.
HBAT54\A\C\S
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 1/3
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
Description
Silicon Schottky Barrier Double Diodes
Features
These diodes feature very low turn-on voltage and fast switching.
There is a PN junction guard ring against excessive voltage such as
electronics attic discharges protects these devices.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature.............................................................................................. -65~+125
°
C
Junction Temperature.................................................................................................... +125
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 230 mW
Maximum Voltages and Currents (Ta=25
°
C)
Repetitive Peak Reverse Voltage........................................................................................ 30 V
Forward Continuous Current.......................................................................................... 200 mA
Repetitive Peak Forward Current .................................................................................. 300 mA
Surge Forward Current (tp<1s)....................................................................................... 600 mA
Characteristics
(Ta=25
°
C)
Characteristic
Symbol
V(BR)R
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
CT
Condition
Min.
30
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
Unit
V
mV
mV
mV
mV
mV
uA
pF
Reverse breakdown Voltage
IR=10uA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA RL=100
measured at IR=1mA
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Trr
-
5
nS
SOT-23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HBAT54C | Silicon Schottky Barrier Double Diodes |
| HBAT54S | Silicon Schottky Barrier Double Diodes |
| HBAV70 | SWITCHING DIODE |
| HBAV99 | HIGH-SPEED SWITCHING DIODE |
| HBAW56 | HIGH-CONDUCTANCE ULTRA DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HBAT54C | 制造商:HSMC 制造商全稱:HSMC 功能描述:Silicon Schottky Barrier Double Diodes |
| HBAT54S | 制造商:HSMC 制造商全稱:HSMC 功能描述:Silicon Schottky Barrier Double Diodes |
| HBAT54X | 制造商:HSMC 制造商全稱:HSMC 功能描述:Silicon Schottky Barrier Double Diodes |
| HBAV70 | 制造商:HSMC 制造商全稱:HSMC 功能描述:SWITCHING DIODE |
| HBAV99 | 制造商:HSMC 制造商全稱:HSMC 功能描述:HIGH-SPEED SWITCHING DIODE |
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