參數(shù)資料
型號: HB56SW3272ESK
廠商: Hitachi,Ltd.
英文描述: 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
中文描述: 256MB的內(nèi)存緩沖EDO公司的DRAM 32 Mword × 72位,4K的刷新,2銀模塊(36個(gè)在16米x 4部分)
文件頁數(shù): 7/29頁
文件大?。?/td> 338K
代理商: HB56SW3272ESK
HB56SW3272ESK-5/6
7
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Terminal voltage on any pin relative to V
SS
Power supply voltage relative to V
SS
Short circuit output current
V
T
V
CC
Iout
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
Power dissipation
P
T
Tstg
19
W
Storage temperature range
–55 to +125
°
C
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Supply voltage
V
CC
V
SS
V
IH
V
IL
Ta
3.0
3.3
3.6
V
1, 2
0
0
0
V
2
Input high voltage
2.0
V
CC
+ 0.3
0.8
V
1
Input low voltage
–0.3
V
1
Ambient temperature range
0
70
°
C
Ambient illuminance
Notes: 1. All voltage referred to V
SS
.
2. The supply voltage with all V
pins must be on the same level. The supply voltage with all V
SS
pins must be on the same level.
100
lx
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HB56SW3272ESK-5 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
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