參數(shù)資料
型號: HB52RF648DC-B
廠商: Elpida Memory, Inc.
英文描述: 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
中文描述: 512 MB的無緩沖內(nèi)存的SODIMM 64 Mword】64位,133/100 MHz內(nèi)存總線,2銀模塊(16個32米】8部分)PC133/100 SDRAM內(nèi)存
文件頁數(shù): 15/20頁
文件大?。?/td> 160K
代理商: HB52RF648DC-B
HB52RF648DC-B, HB52RD648DC-B
Data Sheet E0083H40
15
Notes: 1. AC measurement assumes t
T
= 1 ns. Reference level for timing of input signals is 1.5 V.
2. Access time is measured at 1.5 V. Load condition is C
L
= 50 pF.
3. t
LZ
(min) defines the time at which the outputs achieves the low impedance state.
4. t
HZ
(max) defines the time at which the outputs achieves the high impedance state.
5. t
CES
defines CKE setup time to CK rising edge except power down exit command.
Test Conditions
Input and output timing reference levels: 1.5 V
Input waveform and output load: See following figures
t
T
2.4 V
0.4 V0.8 V
2.0 V
input
t
T
DQ
CL
相關PDF資料
PDF描述
HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RF649DC 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6B 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6BL 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-B 512MB Unbuffered SDRAM S.O.DIMM
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