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參數(shù)資料
| 型號(hào)： | HB52R1289E22-A6B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| 中文描述： | 128M X 72 SYNCHRONOUS DRAM MODULE, 7.5 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁(yè)數(shù)： | 6/18頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | HB52R1289E22-A6B |
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HB52R1289E22-A6B/B6B
Data Sheet E0017H20
6
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
20
SDRAM device attributes:
W
latency
0
0
0
0
0
0
0
1
01
0
21
SDRAM device attributes
0
0
0
1
1
1
1
1
1F
Registered
22
SDRAM device attributes:
General
0
0
0
0
1
1
1
0
0E
V
CC
± 10%
23
SDRAM cycle time
(2nd highest
CE
latency)
(-A6B) 10 ns
1
0
1
0
0
0
0
0
A0
CL = 2
(-B6B) Undefined
0
0
0
0
0
0
0
0
00
24
SDRAM access from Clock
(2nd highest
CE
latency)
(-A6B) 6 ns
0
1
1
0
0
0
0
0
60
(-B6B) Undefined
0
0
0
0
0
0
0
0
00
25
SDRAM cycle time
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
00
26
SDRAM access from Clock
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
27
Minimum row precharge time
0
0
0
1
0
1
0
0
14
20 ns
28
Row active to row active min
RE
to
CE
delay min
Minimum
RE
pulse width
0
0
0
1
0
1
0
0
14
20 ns
29
0
0
0
1
0
1
0
0
14
20 ns
30
0
0
1
1
0
0
1
0
32
50 ns
31
Density of each bank on module 1
0
0
0
0
0
0
0
80
2 bank
512M byte
32
Address and command signal
input setup time
0
0
1
0
0
0
0
0
20
2 ns*
3
33
Address and command signal
input hold time
0
0
0
1
0
0
0
0
10
1 ns*
3
34
Data signal input setup time
0
0
1
0
0
0
0
0
20
2 ns*
3
35
Data signal input hold time
0
0
0
1
0
0
0
0
10
1 ns*
3
36 to 61 Superset information
0
0
0
0
0
0
0
0
00
Future use
62
SPD data revision code
0
0
0
1
0
0
1
0
12
Rev. 1.2A
63
Checksum for bytes 0 to 62
(-A6B)
0
0
1
0
0
1
0
0
24
36
(-B6B)
0
0
1
0
0
0
1
0
22
34
64
Manufacturer’s JEDEC ID code
0
0
0
0
0
1
1
1
07
HITACHI
65 to 71 Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00
72
Manufacturing location
×
×
×
×
×
×
×
×
××
*
4
(ASCII-
8bit code)
相關(guān)PDF資料 |
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| HB52R1289E22-B6B | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22 | 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E2-A6A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x72 SDRAM Module |
| HB52R1289E2-B6A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x72 SDRAM Module |
| HB52R1289E2U-A6B | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM |
| HB52R1289E2U-B6B | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM |
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