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參數(shù)資料
| 型號： | HB52R1289E22-A6B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| 中文描述： | 128M X 72 SYNCHRONOUS DRAM MODULE, 7.5 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 13/18頁 |
| 文件大小： | 168K |
| 代理商： | HB52R1289E22-A6B |
HB52R1289E22-A6B/B6B
Data Sheet E0017H20
13
AC Characteristics
(Ta = 0 to 55°C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V) (cont)
HB52R1289E22
-A6B/B6B
Parameter
Symbol
PC100
Symbol
Min
Max
Unit
Notes
CKE hold time
t
CEH
t
CS
t
CH
Thi
3.0
—
ns
1
Command setup time
Tsi
2.6
—
ns
1
Command hold time
Thi
3.0
—
ns
1
Ref/Active to Ref/Active command period t
RC
Active to precharge command period
Trc
70
—
ns
1
t
RAS
t
RCD
Tras
50
120000
ns
1
Active command to column command
(same bank)
Trcd
20
—
ns
1
Precharge to active command period
t
RP
t
DPL
Trp
20
—
ns
1
Write recovery or data-in to precharge
lead time
Tdpl
20
—
ns
1
Active (a) to Active (b) command period
t
RRD
t
T
t
REF
Trrd
20
—
ns
1
Transition time (rise to fall)
1
5
ns
Refresh period
Notes: 1. AC measurement assumes t
T
= 1 ns. Reference level for timing of input signals is 1.5 V.
2. Access time is measured at 1.5 V. Load condition is C
L
= 50 pF.
3. t
LZ
(min) defines the time at which the outputs achieves the low impedance state.
4. t
HZ
(max) defines the time at which the outputs achieves the high impedance state.
5. t
CES
defines CKE setup time to CK rising edge except power down exit command.
—
64
ms
Test Conditions
Input and output timing reference levels: 1.5 V
Input waveform and output load: See following figures
Ambient illuminance: Under 100 lx
t
T
2.4 V
0.4 V0.8 V
2.0 V
input
t
T
DQ
CL
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| HB52R1289E22-B6B | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22 | 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E2-A6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R1289E2-B6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R1289E2U-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM |
| HB52R1289E2U-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM |
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