- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370429 > HB52E169E12 (Hitachi,Ltd.) 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) PDF資料下載
參數(shù)資料
| 型號： | HB52E169E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| 中文描述： | 128 MB的注冊SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 27/53頁 |
| 文件大?。?/td> | 1737K |
| 代理商： | HB52E169E12 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
HB52E169E12-F
27
2. Single write:
A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write
operation, data is only written to the column address and the bank select address (BA) specified by the write
command set cycle without regard to the burst length setting. (The latency of data input is 1 clock).
Auto Precharge
Read with auto-precharge:
In this operation, since precharge is automatically performed after completing
a read operation, a precharge command need not be executed after each read operation. The command exe-
cuted for the same bank after the execution of this command must be the bank active (ACTV) command. In
addition, an interval defined by l
APR
is required before execution of the next command.
CE latency
4
3
Precharge start cycle
2 cycle before the final data is output
1 cycle before the final data is output
WRIT
CK
Command
Din
ACTV
Row
Column
in 0
in 6
in 7
in 8
Address
in 1
in 4
in 5
in 3
BL = 1
in 6
in 7
in 4
in 5
in 0-1
in 0
in 1
BL = 2
BL = 4
BL = 8
BL = full page
t
RCD
in 0
in 0
in 0
in 0
in 1
in 1
in 1
in 2
in 2
in 2
in 3
in 3
CE
Latency = 3, 4
WRIT
CK
Command
Din
ACTV
Row
Column
in 0
Address
t
RCD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E169E1-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E169EN-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E328EM-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
| HB52E328EM-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
| HB52E329EM-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復。