參數(shù)資料
型號(hào)： HB52E169E12
廠商： Hitachi,Ltd.
英文描述： 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述： 128 MB的注冊(cè)SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 22/53頁(yè)
文件大?。?/td> 1737K
代理商： HB52E169E12
HB52E169E12-F
22
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
Data output by the previous read command continues to be output. After CE la-
tency, the data output resulting from the next command will start.
To [WRIT], [WRIT A]:
These commands stop a burst read, and start a write cycle.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands stop a burst read, and the SDRAM module enters precharge mode.
From READ with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]:
These commands continue read operations until the burst operation is completed, and
the SDRAM module then enters precharge mode.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
From WRITE state, command operation
To [DESL], [NOP]:
These commands continue write operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
These commands stop a burst and start a read cycle.
To [WRIT], [WRIT A]:
These commands stop a burst and start the next write cycle.
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands stop burst write and the SDRAM module then enters precharge mode.
From WRITE with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]:
These commands continue write operations until the burst is completed, and the
SDRAM module enters precharge mode.
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
From REFRESH state, command operation
To [DESL], [NOP], [BST]:
After an auto-refresh cycle (after t
RC
), the SDRAM module automatically enters
the IDLE state.
相關(guān)PDF資料
PDF描述
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
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HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
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HB52E169EN-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
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