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參數(shù)資料
| 型號(hào)： | HAD825SP |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HAD825SP |
HI-SINCERITY
MICROELECTRONICS CORP.
HAD825
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6406
Issued Date : 1994.01.13
Revised Date : 2002.03.06
Page No. : 1/3
HAD825
HSMC Product Specification
Features
Darlington transistor.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipations
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 80 V
VCES Collector to Emitter Voltage...................................................................................... 55 V
VEBO Emitter to Base Voltage............................................................................................ 12 V
IC Collector Current........................................................................................................ 600mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
*VCE(sat)
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
80
55
12
-
-
-
-
-
-
10K
10K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1.2
1.5
1.5
-
100K
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCB=60V
VEB=10V
VCE=60V
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
TO-92
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