- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381860 > HAD826SP (HSMC CORP.) NPN EPITAXIAL PLANAR TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | HAD826SP |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 35K |
| 代理商： | HAD826SP |
HI-SINCERITY
MICROELECTRONICS CORP.
HAD826
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6411-B
Issued Date : 199.03.06
Revised Date : 2000.09.01
Page No. : 1/3
HSMC Product Specification
Description
The HAD826 is designed for general purpose amplifier and high
speed, medium-power switching applications.
Features
Low Collector Saturation Voltage
High Speed Switching
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature .......................................................................................... -55 ~ +150
°
C
Junction Temperature..................................................................................... 150
°
C Maximum
Maximum Power Dissipations
Total Power Dissipation (Ta=25
°
C) .............................................................................. 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ 75 V
VCEO Collector to Emitter Voltage..................................................................................... 60 V
VEBO Emitter to Base Voltage............................................................................................. 6 V
IC Collector Current....................................................................................................... 600mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Cob
Min.
75
60
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
300
1
1.2
2
-
-
-
300
-
-
-
8
Unit
V
V
V
nA
nA
nA
mV
V
V
V
Test Conditions
IC=10uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VCB=60V, VEB(OFF)=3V
VEB=3V, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
IC=20mA, VCE=20V, f=100MHz
VCB=10V, F=1MHz
MHz
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HBAS16 | HIGH-SPEED SWITCHING DIODE |
| HBAT54 | Silicon Schottky Barrier Double Diodes |
| HBAT54A | Silicon Schottky Barrier Double Diodes |
| HBAT54C | Silicon Schottky Barrier Double Diodes |
| HBAT54S | Silicon Schottky Barrier Double Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HADC574Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog-to-Digital Converter， 12-Bit |
| HADC574ZACC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog-to-Digital Converter， 12-Bit |
| HADC574ZACD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog-to-Digital Converter， 12-Bit |
| HADC574ZACJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog-to-Digital Converter， 12-Bit |
| HADC574ZAIC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog-to-Digital Converter， 12-Bit |
發(fā)布緊急采購，3分鐘左右您將得到回復。