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參數(shù)資料
| 型號(hào)： | HA8550S |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 39K |
| 代理商： | HA8550S |
HI-SINCERITY
MICROELECTRONICS CORP.
HA8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6109
Issued Date : 1997.09.05
Revised Date : 2001.04.27
Page No. : 1/4
HA8550S
HSMC Product Specification
Description
The HA8550S is designed for general purpose amplifier
applications.
Features
High DC Current Gain (hFE=100~500 at IC=150mA)
Complementary to HA8050S
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage..................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current...................................................................................................... -700 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
FT
Cob
Min.
-25
-20
-5
-
-
-
100
-
150
-
Typ.
-
-
-
-
-
-
-
170
-
-
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification on hFE
Rank
hFE1
C
D
E
100~200
150~300
250-500
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