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參數(shù)資料
| 型號： | HA8550 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 36K |
| 代理商： | HA8550 |
HI-SINCERITY
MICROELECTRONICS CORP.
HA8550
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6108
Issued Date : 1997.09.05
Revised Date : 2001.08.13
Page No. : 1/3
HA8550
HSMC Product Specification
Description
The HA8550 is designed for use in 2W output amplifier of portable radios in
class B push-pull operation.
Features
High total power dissipation (PT: 2W, TC=25
°
C)
High collector current (IC: 1.5A)
Complementary to HA8050
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................................... 1 W
Total Power Dissipation (Tc=25
°
C)................................................................................................... 2 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage................................................................................................. -25 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ..................................................................................................................... -1.5 A
IB Base Current ............................................................................................................................ -0.5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min.
-40
-25
-6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=-100uA
IC=-2mA
IE=-100uA
VCB=-35V
VEB=-6V
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-50mA, f=100MHZ
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
Classification on hFE2
Rank
Range
C
D
E
120-200
160-320
250-500
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