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參數(shù)資料
| 型號： | HA8050S |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | NPN外延平面型晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 36K |
| 代理商： | HA8050S |
HI-SINCERITY
MICROELECTRONICS CORP.
HA8050S
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6116
Issued Date : 1997.09.08
Revised Date : 2002.04.17
Page No. : 1/4
HA8050S
HSMC Product Specification
Description
The HA8550S is designed for general purpose amplifier applications.
Features
High DC Current Gain (hFE=100~500 at IC=150mA)
Complementary to HA8550S
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 25 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 700 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
25
20
5
-
-
-
-
100
-
150
-
Typ.
-
-
-
-
-
-
-
-
170
-
-
Max.
-
-
-
1
100
0.5
1
500
-
-
10
Unit
V
V
V
uA
nA
V
V
Test Conditions
IC=10uA
IC=1mA
IE=10uA
VCB=20V
VEB=6V
IC=0.5A, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=1V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification on hFE
Rank
hFE1
C
D
E
100~200
150~300
250-500
TO-92
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