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參數(shù)資料
| 型號： | HA3669 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HA3669 |
HI-SINCERITY
MICROELECTRONICS CORP.
HA3669
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HA200210
Issued Date : 2000.11.01
Revised Date : 2002.04.18
Page No. : 1/3
HA3669
HSMC Product Specification
Description
The HA3669 is designed for using in power amplifier applications,
power switching application.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Tstg Storage Temperature .................................................................................... -55 ~ +150
°
C
Tj Junction Temperature................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 750 mW
Maximum Voltages and Currents
BVCBO Collector to Base Breakdown Voltage.................................................................... 80 V
BVCEO Collector to Emitter Breakdown Voltage................................................................. 80 V
BVEBO Emitter to Base Emitter Breakdown Voltage............................................................. 5 V
IC Collector Current (DC)...................................................................................................... 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
Ton
Tstg
Tf
Min.
80
80
5
-
-
-
-
240
-
-
-
-
-
Typ.
-
-
-
-
-
0.15
0.9
-
100
30
0.2
1.0
0.2
Max.
-
-
-
1000
1000
0.5
1.2
-
-
-
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA
IC=10mA
IE=100uA
VCB=80V
VEB=5V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, f=1MHz
MHz
pF
uS
uS
uS
IB1=-IB2=50mA, Duty Cycle
≤
1%
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-92
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