參數(shù)資料
型號(hào): H2N6427
廠商: HSMC CORP.
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶體管
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 35K
代理商: H2N6427
HI-SINCERITY
MICROELECTRONICS CORP.
H2N6427
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 1/3
HSMC Product Specification
Description
Darlington Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 40 V
VCES Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 12 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
Cob
Min.
40
40
12
-
-
-
-
-
-
-
10
20
14
-
Typ.
-
-
-
-
-
-
0.71
0.9
1.52
1.24
-
-
-
5.4
Max.
-
-
-
50
50
1
1.2
1.5
2.0
1.75
100
200
140
7
Unit
V
V
V
nA
nA
uA
V
V
V
V
K
K
K
pF
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
Test Conditions
IC=100uA, IE=0
IC=10uA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
VCE=25V, VBE=0
IC=50mA, IB=0.5mA
IC=500mA, IB=0.5mA
IC=500mA, IB=0.5mA,
VCE=5V, IC=50mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz
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