參數(shù)資料
型號(hào)： H2N6668
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 34K
代理商： H2N6668
HI-SINCERITY
MICROELECTRONICS CORP.
H2N6668
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6754-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
HSMC Product Specification
Description
The H2N6668 is designed for general-purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................... -55~+150
°
C
Junction Temperature..................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 65 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... -80 V
BVCEO Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current........................................................................................................... -10 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
*BVCEO
IEBO
ICEO
ICEV
*VCE(sat)1
*VCE(sat)2
VBE(on)1
VBE(on)2
*hFE1
*hFE2
Min.
-80
-80
-
-
-
-
-
-
-
1
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-100
-1
-300
-2
-3
-2.8
-4.5
20
-
Unit
V
V
mA
mA
uA
V
V
V
V
K
Test Conditions
IC=-10mA
IC=-200mA
VEB=-5V
VCE=-80V
VCE=-80V, VBE(off)=-1.5V
IC=-5A, IB=-10mA
IC=-10A, IB=-100mA
IC=-5A, VCE=-3V
IC=-10A, VCE=-3V
IC=-5A, VCE=-3V
IC=-10A, VCE=-3V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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