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參數(shù)資料
| 型號(hào)： | H2N6718L |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | H2N6718L |
HI-SINCERITY
MICROELECTRONICS CORP.
H2N6718L
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001.04.24
Page No. : 1/4
H2N6718L
HSMC Product Specification
Description
The H2N6718L is designed for general purpose medium power
amplifier and switching applications.
Features
High Power: 850mW
High Current: 1A
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 850 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ...................................................................................... 100 V
VCEO Collector to Emitter Voltage................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current (Continue) ............................................................................................ 1 A
IC Collector Current (Pulse).................................................................................................. 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
100
100
5
-
-
80
50
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
300
-
-
20
Unit
V
V
V
nA
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=80V
IB=35mA, IC=350mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE2
Rank
Range
A
B
50-115
95-300
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