參數(shù)資料
型號： H2N6517
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/4頁
文件大小： 41K
代理商： H2N6517
HI-SINCERITY
MICROELECTRONICS CORP.
H2N6517
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6268-B
Issued Date : 1993.10.05
Revised Date : 2000.09.25
Page No. : 1/4
HSMC Product Specification
Description
The H2N6517 is designed for general purpose applications requiring high
breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage
Low Collector-Emitter Saturation Voltage
The H2N6517 is complementary to H2N6520
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°
C
Junction Temperature ............................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................ 350 V
VEBO Emitter to Base Voltage.......................................................................................................... 5 V
IC Collector Current .................................................................................................................. 500 mA
IB Base Current ........................................................................................................................ 250 mA
Characteristics
(Ta=25
°
C,
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
VBE(on)
*VBE(sat)1
*VBE(sat)2
*VBE(sat)3
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
350
350
5
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.30
0.35
0.50
1
2
0.75
0.85
0.90
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=250V, IE=0
VEB=5V, IC=0
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=50mA, IB=5mA
IC=100mA, VCE=10V
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
VCE=10V, IC=1mA
VCE=10V, IC=10m
VCE=10V, IC=30mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=10mA, VCE=20V, f=20MHz
VCB=20V, f=1MHz, IE=0
MHz
pF
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