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參數(shù)資料
| 型號： | GW35NB60SD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT |
| 中文描述： | N溝道35A條- 600V的-到247低壓差PowerMESH商標(biāo)IGBT的 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大小： | 231K |
| 代理商： | GW35NB60SD |
STGW35NB60SD
2 Electrical characteristics
5/13
Table 7.
Collector-emitter diode
(1)Pulse width limited by max. junction temperature
(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current
(4) Calculated according to the iterative formula:
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
f
Forward On-Voltage
If = 10A
If = 10A, Tj = 125°C
1.3
1
2
V
V
t
rr
t
a
Q
rr
I
rrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
If = 20A, V
R
= 40V,
T
j
= 25°C, di/dt = 100A/μs
(see Figure 19)
44
32
66
3
0.375
ns
ns
nC
A
t
rr
t
a
Q
rr
I
rrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
If = 20A, V
R
= 40V,
T
j
= 125°C, di/dt = 100A/μs
(see Figure 19)
88
56
237
5.4
0.57
ns
ns
nC
A
ICTC
)
–
C
–
)
TCIC
(
)
×
RTHJ
=
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