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參數(shù)資料
| 型號(hào)： | GW35NB60SD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT |
| 中文描述： | N溝道35A條- 600V的-到247低壓差PowerMESH商標(biāo)IGBT的 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 231K |
| 代理商： | GW35NB60SD |
2 Electrical characteristics
STGW35NB60SD
4/13
Table 5.
Switching on/off (inductive load)
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 480V, I
C
= 20A
R
G
= 100
, V
GE
= 15V, Tj= 25°C
(see Figure 3)
92
70
340
ns
ns
A/μs
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 480V, I
C
= 20A
R
G
= 100
, V
GE
= 15V, Tj= 125°C
(see Figure 3)
80
73
320
ns
ns
A/μs
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
cc
= 480V, I
C
= 20A,
R
GE
= 100
, V
GE
= 5V,T
J
=25°C
(see Figure 18)
0.78
1.1
0.79
μs
μs
μs
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
cc
= 480V, I
C
= 20A,
R
GE
=100
,V
GE
=15V, Tj=125°C
(see Figure 18)
1.1
2.4
1.2
μs
μs
μs
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Eon
Note
2
E
off
Note
3
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
= 480V, I
C
= 20A
R
G
=100
, V
GE
= 15V, Tj= 25°C
(see Figure 18)
0.84
7.4
8.24
mJ
mJ
mJ
Eon
Note
2
E
off
Note
3
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
= 480V, I
C
= 20A
R
G
=100
, V
GE
= 15V, Tj= 125°C
(see Figure 18)
0.86
11.5
12.4
mJ
mJ
mJ
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