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參數(shù)資料
| 型號(hào)： | GW35NB60SD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT |
| 中文描述： | N溝道35A條- 600V的-到247低壓差PowerMESH商標(biāo)IGBT的 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 231K |
| 代理商： | GW35NB60SD |
1 Electrical ratings
STGW35NB60SD
2/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
I
C
Note
4
Collector Current (continuous) at 25°C
70
A
I
C
Note
4
Collector Current (continuous) at 100°C
35
A
I
CM
Note
1
Collector Current (pulsed)
250
A
V
GE
Gate-Emitter Voltage
± 20
V
I
f
Diode RMS Forward Current at T
C
= 25°C
30
A
P
TOT
Total Dissipation at T
C
= 25°C
200
W
T
j
Operating Junction Temperature
– 55 to 150
°C
T
stg
Storage Temperature
T
L
Maximum Lead Temperature for Soldering
Purpose (1.6mm from case, for 10sec.)
300
°C
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case (IGBT)
--
--
0.625
°C/W
Rthj-case
Thermal Resistance Junction-case (DIODE)
--
--
1.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
--
--
50
°C/W
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