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參數(shù)資料
| 型號： | GW35NB60SD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT |
| 中文描述： | N溝道35A條- 600V的-到247低壓差PowerMESH商標IGBT的 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 231K |
| 代理商： | GW35NB60SD |
STGW35NB60SD
2 Electrical characteristics
3/13
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 3.
Static
Table 4.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 1mA, V
GE
= 0
600
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 20A, Tj= 25°C
V
GE
= 15V, I
C
= 20A, Tj= 125°C
1.25
1.2
1.7
V
V
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250μA
2.5
5
V
I
CES
Collector-Emitter Leakage
Current (V
GE
= 0)
V
CE
= Max Rating,Tc=25°C
V
CE
= Max Rating, Tc=125°C
10
100
μA
μA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20V , V
CE
= 0
± 100
nA
g
fs
Forward Transconductance
V
CE
= 10V
,
I
C
= 18A
20
S
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
1820
167
27
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 20A,
V
GE
= 15V,
(see Figure 17)
83
10
27
115
nC
nC
nC
I
CL
Turn-Off SOA Minimum
Current
V
clamp
= 480V
,
Tj = 125°C
R
G
= 100
80
A
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