參數(shù)資料
型號(hào): GS832236AB-150VT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁(yè)數(shù): 9/36頁(yè)
文件大?。?/td> 790K
代理商: GS832236AB-150VT
GS832218/36A(B/D)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 2/2011
17/36
2011, GSI Technology
Preliminary
Operating
Currents
Parameter
Test
Conditions
Mo
de
Sy
mb
ol
-333
-250
-200
-150
Un
it
0
to
70°C
40
to
85°C
0
to
70°
C
–40
to
85°C
0
to
70°C
40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
Dev
ice
Sel
ected;
All
other
input
s
V
IH
o
r≤
V
IL
Ou
tput
op
en
(x36)
Pipeline
I DD I DD
Q
285
50
295
50
230
40
240
40
195
30
205
30
155
25
165
25
mA
Fl
ow
Through
I DD I DD
Q
205
35
215
35
180
30
190
30
160
25
170
25
140
20
150
20
mA
(x18)
Pipeline
I DD I DD
Q
265
25
275
25
210
20
220
20
175
15
185
15
140
15
150
15
mA
Fl
ow
Through
I DD I DD
Q
190
20
200
20
165
15
175
15
145
15
155
15
130
10
140
10
mA
Standby
Current
ZZ
V
DD
–0.2
V
Pipeline
I SB
30
40
30
40
30
40
30
40
mA
Fl
ow
Through
I SB
30
40
30
40
30
40
30
40
mA
De
sel
ec
t
Current
Dev
ice
D
eselec
ted;
All
other
input
s
V
IH
or
V
IL
Pipeline
I DD
70
80
60
70
55
65
50
60
mA
Fl
ow
Through
I DD
60
70
55
65
50
60
45
55
mA
Notes:
1.
I DD
a
nd
I DDQ
apply
to
an
ycombination
of
V
DD1
,V
DD2
,V
DD
Q
1,
and
V
DDQ2
operation.
2.
All
p
arameters
listed
are
worst
case
scenario.
相關(guān)PDF資料
PDF描述
GS8342D11BD-500IT 4M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8342D11BD-500 4M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8342D11BD-550IT 4M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8342D37BD-300I 1M X 36 QDR SRAM, 0.45 ns, PBGA165
GS8342QT07BD-357 4M X 8 QDR SRAM, 0.45 ns, PBGA165
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS832236AB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-200I 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-200IV 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS832236AB-200V 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS832236AB-225M 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays