參數(shù)資料
型號: GS832236AB-150VT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁數(shù): 4/36頁
文件大小: 790K
代理商: GS832236AB-150VT
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
WR
X
Simple
Synchronous
Operation
Simple
Burst
Synchronou
sOperation
CR
R
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
GS832218/36A(B/D)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 2/2011
12/36
2011, GSI Technology
Preliminary
Simplified State Diagram
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GS8342D11BD-500IT 4M X 9 QDR SRAM, 0.45 ns, PBGA165
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS832236AB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-200I 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-200IV 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS832236AB-200V 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS832236AB-225M 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays