參數(shù)資料
型號: GS832236AB-150VT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁數(shù): 7/36頁
文件大?。?/td> 790K
代理商: GS832236AB-150VT
GS832218/36A(B/D)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 2/2011
15/36
2011, GSI Technology
Preliminary
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Junction Temperature
(Commercial Range Versions)
TJ
0
25
85
°C
Junction Temperature
(Industrial Range Versions)*
TJ
–40
25
100
°C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Thermal Impedance
Package
Test PCB
Substrate
θ JA (C°/W)
Airflow = 0 m/s
θ JA (C°/W)
Airflow = 1 m/s
θ JA (C°/W)
Airflow = 2 m/s
θ JB (C°/W)
θ JC (C°/W)
119 BGA
4-layer
TBD
165 BGA
4-layer
TBD
Notes:
1. Thermal Impedance data is based on a number of of samples from mulitple lots and should be viewed as a typical number.
2. Please refer to JEDEC standard JESD51-6.
3. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to
the PCB can result in cooling or heating of the RAM depending on PCB temperature.
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
Note:
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Capacitance
oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
8
10
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
12
14
pF
Note:
These parameters are sample tested.
(TA = 25
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