參數(shù)資料
型號(hào): GS8170LW36AC
廠商: GSI TECHNOLOGY
英文描述: 18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
中文描述: 35.7ヒ1x1Lp的CMOS的I / O后寫入SigmaRAM
文件頁(yè)數(shù): 15/32頁(yè)
文件大?。?/td> 765K
代理商: GS8170LW36AC
GS8170LW36/72AC-350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
15/32
2003, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
CMOS I/O DC Input Characteristics
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–0.5 to 2.5
V
V
DDQ
Voltage in V
DDQ
Pins
–0.5 to V
DD
V
V
I/O
Voltage on I/O Pins
–0.5 to V
DDQ
+ 0.5 (
2.5 V max.)
V
V
IN
Voltage on Other Input Pins
–0.5 to V
DDQ
+ 0.5 (
2.5 V max.)
V
I
IN
Input Current on Any Pin
+/–100
mA dc
I
OUT
Output Current on Any I/O Pin
+/–100
mA dc
T
J
Maximum Junction Temperature
125
o
C
T
STG
Storage Temperature
–55 to 125
o
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
1.7
1.8
1.95
V
1.8 V I/O Supply Voltage
V
DDQ
1.7
1.8
V
DD
V
Ambient Temperature
(Commercial Range Versions)
T
A
0
25
70
°
C
1
Ambient Temperature
(Industrial Range Versions)
T
A
–40
25
85
°
C
1
Note:
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted
are evaluated for worst case in the temperature range marked on the device.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
CMOS Input High Voltage
V
IH
0.65 * V
DDQ
V
DDQ
+ 0.3
V
1
CMOS Input Low Voltage
V
IL
–0.3
0.35 * V
DDQ
V
1
Note: For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
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