參數(shù)資料
型號(hào)： GS74116
廠商： GSI TECHNOLOGY
英文描述： 4Mb（256K x 16Bit）Asynchronous SRAM(4M位（256K x 16位）異步靜態(tài)RAM)
中文描述： 4Mb的（256 × 16Bit的）異步SRAM（4分位（256K × 16位）異步靜態(tài)RAM）的
文件頁數(shù)： 6/14頁
文件大?。?/td> 184K
代理商： GS74116
Rev: 2.02 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
6/14
1999, Giga Semconductor, Inc.
N
GS74116TP/J/U
AC Characteristics
*These parameters are sampled and are not 100% tested
Read Cycle 1: CE = OE = V
IL
, WE = V
IH
, UB and, or LB = V
IL
Read Cycle
Parameter
Symbol
-8
-10
-12
-15
Unit
Mn
Max
Mn
Max
Mn
Max
Mn
Max
Read cycle time
t
RC
8
---
10
---
12
---
15
---
ns
Address access time
t
AA
---
8
---
10
---
12
---
15
ns
Chip enable access time (CE)
t
AC
---
8
---
10
---
12
---
15
ns
Byte enable access time (UB, LB)
t
AB
---
3.5
---
4
---
5
---
6
ns
Output enable to output valid (OE)
t
OE
---
3.5
---
4
---
5
---
6
ns
Output hold fromaddress change
t
OH
3
---
3
---
3
---
3
---
ns
Chip enable to output in low Z (CE)
t
LZ
*
3
---
3
---
3
---
3
---
ns
Output enable to output in low Z (OE)
t
OLZ
*
0
---
0
---
0
---
0
---
ns
Byte enable to output in low Z (UB, LB)
t
BLZ
*
0
---
0
---
0
---
0
---
ns
Chip disable to output in High Z (CE)
t
HZ
*
---
4
---
5
---
6
---
7
ns
Output disable to output in High Z (OE)
t
OHZ
*
---
3.5
---
4
---
5
---
6
ns
Byte disable to output in High Z (UB, LB)
t
BHZ
*
---
3.5
---
4
---
5
---
6
ns
t
AA
t
OH
t
RC
Address
Data Out
Previous Data
Data valid
相關(guān)PDF資料
PDF描述
GS78116 8Mb（512K x 16Bit）Asynchronous SRAM(8M位（512K x 16位）異步靜態(tài)RAM)
GS78132 8Mb（256K x 32Bit）Asynchronous SRAM(8M位（256K x 32位）異步靜態(tài)RAM)
GS81032A 1Mb（32K x 32Bit）Synchronous Burst SRAM(1M位（32K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS815018 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS815032 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS74116A 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM
GS74116AGP-10 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44TSOP-II - Trays
GS74116AGP-10E 制造商:GSI Technology 功能描述:GS74116AGP-10E - Trays
GS74116AGP-10I 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44TSOP-II - Trays 制造商:GSI Technology 功能描述:IC 4MB ASYNCH SRAM 256K X 16 10NS 制造商:GSI Technology 功能描述:IC, 4MB ASYNCH SRAM 256K X 16, 10NS 制造商:GSI Technology 功能描述:IC, 4MB ASYNCH SRAM 256K X 16, 10NS; Memory Size:4Mbit; Memory Configuration:256K x 16; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-2; No. of Pins:44; Access Time:10ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes
GS74116AGP-10T 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44TSOP-II - Tape and Reel
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