參數(shù)資料
型號(hào): GS74116
廠商: GSI TECHNOLOGY
英文描述: 4Mb(256K x 16Bit)Asynchronous SRAM(4M位(256K x 16位)異步靜態(tài)RAM)
中文描述: 4Mb的(256 × 16Bit的)異步SRAM(4分位(256K × 16位)異步靜態(tài)RAM)的
文件頁數(shù): 3/14頁
文件大?。?/td> 184K
代理商: GS74116
Rev: 2.02 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
3/14
1999, Giga Semconductor, Inc.
N
GS74116TP/J/U
Note: X: “H” or “L”
Note:
Permanent device damage may occur if Absolute MaximumRatings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Truth Table
CE
OE
WE
LB
UB
DQ
1
to DQ
8
DQ
9
to DQ
16
V
DD
Current
H
X
X
X
X
Not Selected
Not Selected
ISB
1
, ISB
2
L
L
H
L
L
Read
Read
I
DD
L
H
Read
High Z
H
L
High Z
Read
L
X
L
L
L
Write
Write
L
H
Write
Not Write, High Z
H
L
Not Write, High Z
Write
L
H
H
X
X
High Z
High Z
L
X
X
H
H
High Z
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
-0.5 to +4.6
V
Input Voltage
V
IN
-0.5 to V
DD
+0.5
(
4.6V max.)
V
Output Voltage
V
OUT
-0.5 to V
DD
+0.5
(
4.6V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
-55 to 150
o
C
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