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參數(shù)資料
| 型號(hào)： | GP400DDS18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Switch IGBT Module Preliminary Information |
| 中文描述： | 400 A, 1800 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | GP400DDS18 |
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
The GP400DDS12 is a dual switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
FEATURES
s
n - Channel
s
Enhancement Mode
s
High Input Impedance
s
Optimised For High Power High Frequency Operation
s
Isolated Base
s
Full 1200V Capability
s
400A Per Arm
APPLICATIONS
s
High Power Switching
s
Motor Control
s
Inverters
s
Traction Systems
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
2.7V
I
C
(max)
400A
I
C(PK)
(max)
800A
Fig. 1 Electrical connections - (not to scale)
Fig.2 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
ORDERING INFORMATION
Order As: GP400DDS12
Note: When ordering, please use the whole part number.
1
3
2
4
12
11
10
7
6
5
8
9
3(C
1)
4(E
2)
2(C
2)
12(C2)
7(C1)
11(G2)
10(E2)
5(E1)
6(G1)
1(E
1)
GP400DDS12
Powerline N-Channel Dual Switch IGBT Module
DS5341-1.1 February 2000
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| GP400LAHT3A1X | 制造商:GP BATTERIES 功能描述:BATTERY NIMH 4AH 3 CELL 制造商:GP BATTERIES 功能描述:BATTERY, NIMH, 4AH, 3 CELL 制造商:GP BATTERIES 功能描述:BATTERY, NIMH, 4AH, 3 CELL, Battery Size Code:-, Battery Capacity:4Ah, Battery Voltage:3.6V, Battery Technology:Nickel Metal Hydride, External Diameter:18mm, External Height:215mm, Weight:70g, Battery Terminals:Solder Tab, Battery , RoHS Compliant: NA |
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