參數(shù)資料
型號： GP400DDS18
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 功率晶體管
英文描述： Dual Switch IGBT Module Preliminary Information
中文描述： 400 A, 1800 V, N-CHANNEL IGBT
文件頁數(shù)： 4/10頁
文件大小： 100K
代理商： GP400DDS18
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
C
ies
Input capacitance
Module inductance
V
CE = 25V, VGE = 0V, f = 1MHz
nH
-
20
45
-
nF
L
M
I
F
Diode forward current
I
FM
Diode maximum forward current
DC
t
p = 1ms
A
400
800
-
V
F
Diode forward voltage
I
F = 400A
3.0
2.5
-
A
V
I
F = 400A, Tcase = 125C
2.9
2.4
-
V
ELECTRICAL CHARACTERISTICS
Symbol
Collector cut-off current
I
GES
Gate leakage current
Conditions
V
GE = 0V, VCE = VCES
V
GE = ±20V, VCE = 0V
mA
1
±4
Max.
-
Typ.
-
Min.
-
Parameter
T
case = 25C unless stated otherwise.
V
7.5
3.5
2.7
-
Gate threshold voltage
V
GE = 15V, IC = 400A
-
4
I
C = 120mA, VGE = VCE
Units
I
CES
A
V
GE(TH)
V
4.0
3.2
-
V
GE = 15V, IC = 400A, Tcase = 125C
V
CE(SAT)
Collector-emitter saturation voltage
V
GE = 0V, VCE = VCES, Tcase = 125C
mA
50
-
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